Vishay Siliconix SI4904DY-T1-E3

Part No.:
SI4904DY-T1-E3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMSI4904DY-T1-E3.pdf
Description:
MOSFET 2N-CH 40V 8A 8SOIC
Quantity:

Unit Price:$0

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SI4904DY-T1-E3 Information

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Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
8A
Rds On (Max) @ Id, Vgs:
16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2390pF @ 20V
Power - Max:
3.25W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Datasheet:
IC-MAX.COMSI4904DY-T1-E3.pdf
Image SI4904DY-T1-E3 SI4904DY-T1-GE3
Part Number SI4904DY-T1-E3 SI4904DY-T1-GE3
Manufacturer Vishay Siliconix Vishay Siliconix
Series TrenchFET® TrenchFET®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Last Time Buy Last Time Buy
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature - -
Drain to Source Voltage (Vdss) 40V 40V
Current - Continuous Drain (Id) @ 25°C 8A 8A
Rds On (Max) @ Id, Vgs 16mOhm @ 5A, 10V 16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 20V 2390pF @ 20V
Power - Max 3.25W 3.25W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
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