Diodes Incorporated DMG1016UDW-7

Part No.:
DMG1016UDW-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
IC-MAX.COMDMG1016UDW-7.pdf
Description:
MOSFET N/P-CH 20V SOT363
Quantity:

Unit Price:$0

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DMG1016UDW-7 Information

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Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
1.07A, 845mA
Rds On (Max) @ Id, Vgs:
450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
60.67pF @ 10V
Power - Max:
330mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363
Datasheet:
IC-MAX.COMDMG1016UDW-7.pdf
Image DMG1016UDW-7 DMG1016UDWQ-7
Part Number DMG1016UDW-7 DMG1016UDWQ-7
Manufacturer Diodes Incorporated Diodes Incorporated
Series - -
Package/Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Not For New Designs
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration N and P-Channel N and P-Channel Complementary
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 1.07A, 845mA 1.066A (Ta), 845mA (Ta)
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V 736.6nC @ 4.5V, 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 10V 60.67pF @ 10V, 59.76pF @ 16V
Power - Max 330mW 330mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - Automotive
Qualification - AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-363 SOT-363
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