Vishay Siliconix SI1026X-T1-GE3

Part No.:
SI1026X-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
IC-MAX.COMSI1026X-T1-GE3.pdf
Description:
MOSFET 2N-CH 60V 0.305A SC89
Quantity:

Unit Price:$0

Ext Price:$0

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SI1026X-T1-GE3 Information

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Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
305mA
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
30pF @ 25V
Power - Max:
250mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-89 (SOT-563F)
Datasheet:
IC-MAX.COMSI1026X-T1-GE3.pdf
Image SI1026X-T1-GE3 SI1026X-T1-E3
Part Number SI1026X-T1-GE3 SI1026X-T1-E3
Manufacturer Vishay Siliconix Vishay Siliconix
Series - -
Package/Case SOT-563, SOT-666 SOT-563, SOT-666
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 305mA 305mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V 30pF @ 25V
Power - Max 250mW 250mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-89 (SOT-563F) SC-89 (SOT-563F)
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