Taiwan Semiconductor Corporation TSM500P02DCQ

Part No.:
TSM500P02DCQ
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FET, MOSFET Arrays
Package:
6-VDFN Exposed Pad
Description:
MOSFET 2P-CH 20V 4.7A 6TDFN
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Unit Price:$0

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TSM500P02DCQ Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
6-VDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.7A (Tc)
Rds On (Max) @ Id, Vgs:
50mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1230pF @ 10V
Power - Max:
620mW (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TDFN (2x2)
Image TSM500P02DCQ RFG TSM500P02DCQ
Part Number TSM500P02DCQ RFG TSM500P02DCQ
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - -
Package/Case 6-VDFN Exposed Pad 6-VDFN Exposed Pad
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual) 2 P-Channel
FET Feature - -
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) 4.7A (Tc)
Rds On (Max) @ Id, Vgs 50mOhm @ 3A, 4.5V 50mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 10V 1230pF @ 10V
Power - Max 620mW 620mW (Tc)
Operating Temperature -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TDFN (2x2) 6-TDFN (2x2)
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