STMicroelectronics M1P45M12W2-1LA

Part No.:
M1P45M12W2-1LA
Manufacturer:
STMicroelectronics
Category:
FET, MOSFET Arrays
Package:
32-PowerDIP Module (1.264", 32.10mm)
Datasheet:
IC-MAX.COMM1P45M12W2-1LA.pdf
Description:
MOSFET 6N-CH 1200V ACEPACK DMT
Quantity:

Unit Price:$0

Ext Price:$0

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M1P45M12W2-1LA Information

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Manufacturer:
STMicroelectronics
Series:
ECOPACK®
Package/Case:
32-PowerDIP Module (1.264", 32.10mm)
Packaging:
Tube
Product Status:
Active
Technology:
Silicon Carbide (SiC)
Configuration:
6 N-Channel (Phase Leg)
FET Feature:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Rds On (Max) @ Id, Vgs:
60.5mOhm @ 20A, 18V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds:
2086pF @ 800V
Power - Max:
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ACEPACK DMT-32
Datasheet:
IC-MAX.COMM1P45M12W2-1LA.pdf
Image M1P45M12W2-1LA
Part Number M1P45M12W2-1LA
Manufacturer STMicroelectronics
Series ECOPACK®
Package/Case 32-PowerDIP Module (1.264", 32.10mm)
Packaging Tube
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel (Phase Leg)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 60.5mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 2086pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package ACEPACK DMT-32
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