Rohm Semiconductor RGT8NS65DGC9
- Part No.:
- RGT8NS65DGC9
- Manufacturer:
- Rohm Semiconductor
- Category:
- Single IGBTs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
RGT8NS65DGC9.pdf
- Description:
- IGBT TRENCH FIELD 650V 8A TO262
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
RGT8NS65DGC9 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Rohm Semiconductor
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 8 A
- Current - Collector Pulsed (Icm):
- 12 A
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 4A
- Power - Max:
- 65 W
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- 13.5 nC
- Td (on/off) @ 25°C:
- 17ns/69ns
- Test Condition:
- 400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr):
- 40 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
- Datasheet:
-
RGT8NS65DGC9.pdf
| Image |  |
| Part Number | RGT8NS65DGC9 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Package/Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Packaging | Tube |
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 12 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Power - Max | 65 W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 13.5 nC |
| Td (on/off) @ 25°C | 17ns/69ns |
| Test Condition | 400V, 4A, 50Ohm, 15V |
| Reverse Recovery Time (trr) | 40 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
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