STMicroelectronics STGB30M65DF2

Part No.:
STGB30M65DF2
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC-MAX.COMSTGB30M65DF2.pdf
Description:
IGBT TRENCH FS 650V 60A TO263
Quantity:

Unit Price:$0

Ext Price:$0

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STGB30M65DF2 Information

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Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
60 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Power - Max:
258 W
Switching Energy:
300µJ (on), 960µJ (off)
Input Type:
Standard
Gate Charge:
80 nC
Td (on/off) @ 25°C:
31.6ns/115ns
Test Condition:
400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):
140 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)
Datasheet:
IC-MAX.COMSTGB30M65DF2.pdf
Image STGB30M65DF2
Part Number STGB30M65DF2
Manufacturer STMicroelectronics
Series -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 258 W
Switching Energy 300µJ (on), 960µJ (off)
Input Type Standard
Gate Charge 80 nC
Td (on/off) @ 25°C 31.6ns/115ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
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