Rohm Semiconductor QS8M51HZGTR

Part No.:
QS8M51HZGTR
Manufacturer:
Rohm Semiconductor
Category:
FET, MOSFET Arrays
Package:
8-SMD, Flat Leads
Datasheet:
IC-MAX.COMQS8M51HZGTR.pdf
Description:
MOSFET N/P-CH 100V 2A TSMT8
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Unit Price:$0

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QS8M51HZGTR Information

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
8-SMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2A (Ta), 1.5A (Ta)
Rds On (Max) @ Id, Vgs:
325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
4.7nC @ 5V, 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 25V, 950pF @ 25V
Power - Max:
1.1W (Ta)
Operating Temperature:
-55°C ~ 150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT8
Datasheet:
IC-MAX.COMQS8M51HZGTR.pdf
Image QS8M51HZGTR
Part Number QS8M51HZGTR
Manufacturer Rohm Semiconductor
Series -
Package/Case 8-SMD, Flat Leads
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2A (Ta), 1.5A (Ta)
Rds On (Max) @ Id, Vgs 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 5V, 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V, 950pF @ 25V
Power - Max 1.1W (Ta)
Operating Temperature -55°C ~ 150°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TSMT8
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