Qorvo UHB100SC12E1BC3N

Part No.:
UHB100SC12E1BC3N
Manufacturer:
Qorvo
Category:
FET, MOSFET Arrays
Package:
Module
Datasheet:
IC-MAX.COMUHB100SC12E1BC3N.pdf
Description:
MOSFET 2P-CH 1200V 100A MODULE
Quantity:

Unit Price:$0

Ext Price:$0

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UHB100SC12E1BC3N Information

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Manufacturer:
Qorvo
Series:
-
Package/Case:
Module
Packaging:
Bulk
Product Status:
Active
Technology:
SiCFET (Silicon Carbide)
Configuration:
2 P-Channel (Half Bridge)
FET Feature:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Rds On (Max) @ Id, Vgs:
12mOhm @ 70A, 12V
Vgs(th) (Max) @ Id:
6V @ 40mA
Gate Charge (Qg) (Max) @ Vgs:
170nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:
5859pF @ 800V
Power - Max:
417W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
Module
Datasheet:
IC-MAX.COMUHB100SC12E1BC3N.pdf
Image UHB100SC12E1BC3N
Part Number UHB100SC12E1BC3N
Manufacturer Qorvo
Series -
Package/Case Module
Packaging Bulk
Product Status Active
Technology SiCFET (Silicon Carbide)
Configuration 2 P-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 12mOhm @ 70A, 12V
Vgs(th) (Max) @ Id 6V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 5859pF @ 800V
Power - Max 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package Module
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