onsemi NXH006P120M3F2PTHG
- Part No.:
- NXH006P120M3F2PTHG
- Manufacturer:
- onsemi
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
NXH006P120M3F2PTHG.pdf
- Description:
- MOSFET 2N-CH 1200V 191A 36PIM
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
NXH006P120M3F2PTHG Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 191A (Tc)
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 100A, 18V
- Vgs(th) (Max) @ Id:
- 4.4V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs:
- 622nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11914pF @ 800V
- Power - Max:
- 556W (Tc)
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- 36-PIM (56.7x62.8)
- Datasheet:
-
NXH006P120M3F2PTHG.pdf
| Image |  |
| Part Number | NXH006P120M3F2PTHG |
| Manufacturer | onsemi |
| Series | - |
| Package/Case | Module |
| Packaging | Tray |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 191A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 80mA |
| Gate Charge (Qg) (Max) @ Vgs | 622nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11914pF @ 800V |
| Power - Max | 556W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | 36-PIM (56.7x62.8) |
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