onsemi NVXK2PR80WXT2
- Part No.:
- NVXK2PR80WXT2
- Manufacturer:
- onsemi
- Category:
- FET, MOSFET Arrays
- Package:
- 32-PowerDIP Module (1.449", 36.80mm)
- Datasheet:
-
NVXK2PR80WXT2.pdf
- Description:
- MOSFET 4N-CH 1200V 31A APM32
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
NVXK2PR80WXT2 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 32-PowerDIP Module (1.449", 36.80mm)
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 4 N-Channel (Full Bridge)
- FET Feature:
- Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 31A (Tc)
- Rds On (Max) @ Id, Vgs:
- 116mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id:
- 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs:
- 56nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1154pF @ 800V
- Power - Max:
- 208W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- APM32
- Datasheet:
-
NVXK2PR80WXT2.pdf
| Image |  |
| Part Number | NVXK2PR80WXT2 |
| Manufacturer | onsemi |
| Series | - |
| Package/Case | 32-PowerDIP Module (1.449", 36.80mm) |
| Packaging | Tube |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 116mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1154pF @ 800V |
| Power - Max | 208W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | APM32 |
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