onsemi NVMJD010N10MCLTWG

Part No.:
NVMJD010N10MCLTWG
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
SOT-1205, 8-LFPAK56
Datasheet:
IC-MAX.COMNVMJD010N10MCLTWG.pdf
Description:
MOSFET 2N-CH 100V 11.8A 8LFPAK
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Unit Price:$0

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NVMJD010N10MCLTWG Information

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Manufacturer:
onsemi
Series:
-
Package/Case:
SOT-1205, 8-LFPAK56
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
11.8A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs:
10mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
3V @ 97µA
Gate Charge (Qg) (Max) @ Vgs:
26.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1795pF @ 50V
Power - Max:
3.1W (Ta), 84W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-LFPAK
Datasheet:
IC-MAX.COMNVMJD010N10MCLTWG.pdf
Image NVMJD010N10MCLTWG
Part Number NVMJD010N10MCLTWG
Manufacturer onsemi
Series -
Package/Case SOT-1205, 8-LFPAK56
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11.8A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs 10mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 3V @ 97µA
Gate Charge (Qg) (Max) @ Vgs 26.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1795pF @ 50V
Power - Max 3.1W (Ta), 84W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-LFPAK
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