What is the Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

What is the Additional Feature ?

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Name: NTMFD0D9N02P1E
Brand: onsemi
SKU: NTMFD0D9N02P1E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

onsemi NTMFD0D9N02P1E

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Part No.:: NTMFD0D9N02P1E

Manufacturer:: onsemi

Category:: FET, MOSFET Arrays

Package:: 8-PowerWDFN

Datasheet:: NTMFD0D9N02P1E.pdf

Description:: MOSFET 2N-CH 30V/25V 14A 8PQFN

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NTMFD0D9N02P1E Information

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Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual) Asymmetrical

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V, 25V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 30A (Ta)

Rds On (Max) @ Id, Vgs:: 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V

Vgs(th) (Max) @ Id:: 2V @ 340µA, 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 9nC, 30nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 1400pF @ 15V, 5050pF @ 13V

Power - Max:: 960mW (Ta), 1.04W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

Datasheet:: NTMFD0D9N02P1E.pdf

Image
Part Number	NTMFD0D9N02P1E	NTMFD0D9N02P1E
Manufacturer	onsemi	onsemi
Series	-	-
Package/Case	8-PowerWDFN	8-PowerWDFN
Packaging	Tape & Reel (TR)	Tape & Reel (TR)
Product Status	Active	Active
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual) Asymmetrical	2 N-Channel (Dual) Asymmetrical
FET Feature	-	-
Drain to Source Voltage (Vdss)	30V, 25V	30V, 25V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 30A (Ta)	14A (Ta), 30A (Ta)
Rds On (Max) @ Id, Vgs	3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V	3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V
Vgs(th) (Max) @ Id	2V @ 340µA, 2V @ 1mA	2V @ 340µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V, 30nC @ 4.5V	9nC, 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 15V, 5050pF @ 13V	1400pF @ 15V, 5050pF @ 13V
Power - Max	960mW (Ta), 1.04W (Ta)	960mW (Ta), 1.04W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Grade	-	-
Qualification	-	-
Mounting Type	Surface Mount	Surface Mount
Supplier Device Package	8-PQFN (5x6)	8-PQFN (5x6)

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