What is the Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

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Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Name: HGTP5N120BND
Brand: onsemi
SKU: HGTP5N120BND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

onsemi HGTP5N120BND

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Part No.:: HGTP5N120BND

Manufacturer:: onsemi

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: HGTP5N120BND.pdf

Description:: IGBT NPT 1200V 21A TO220-3

Quantity:: Add To Cart Add To RFQ list

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HGTP5N120BND Information

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Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 21 A

Current - Collector Pulsed (Icm):: 40 A

Vce(on) (Max) @ Vge, Ic:: 2.7V @ 15V, 5A

Power - Max:: 167 W

Switching Energy:: 450µJ (on), 390µJ (off)

Input Type:: Standard

Gate Charge:: 53 nC

Td (on/off) @ 25°C:: 22ns/160ns

Test Condition:: 960V, 5A, 25Ohm, 15V

Reverse Recovery Time (trr):: 65 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

Datasheet:: HGTP5N120BND.pdf

Image
Part Number	HGTP5N120BND
Manufacturer	onsemi
Series	-
Package/Case	TO-220-3
Packaging	Tube
Product Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	21 A
Current - Collector Pulsed (Icm)	40 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 5A
Power - Max	167 W
Switching Energy	450µJ (on), 390µJ (off)
Input Type	Standard
Gate Charge	53 nC
Td (on/off) @ 25°C	22ns/160ns
Test Condition	960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr)	65 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3

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