Microsemi Corporation APTC90H12T2G
- Part No.:
- APTC90H12T2G
- Manufacturer:
- Microsemi Corporation
- Category:
- FET, MOSFET Arrays
- Package:
- SP2
- Datasheet:
-
APTC90H12T2G.pdf
- Description:
- MOSFET 4N-CH 900V 30A SP2
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
APTC90H12T2G Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Microsemi Corporation
- Series:
- CoolMOS™
- Package/Case:
- SP2
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 4 N-Channel (Full Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 900V
- Current - Continuous Drain (Id) @ 25°C:
- 30A
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs:
- 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6800pF @ 100V
- Power - Max:
- 250W
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SP2
- Datasheet:
-
APTC90H12T2G.pdf
| Image |  |
| Part Number | APTC90H12T2G |
| Manufacturer | Microsemi Corporation |
| Series | CoolMOS™ |
| Package/Case | SP2 |
| Packaging | Tray |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 100V |
| Power - Max | 250W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SP2 |
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