Infineon Technologies ISG0614N06NM5HSCATMA1
- Part No.:
- ISG0614N06NM5HSCATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 10-PowerWDFN
- Datasheet:
-
ISG0614N06NM5HSCATMA1.pdf
- Description:
- MOSFET 2N-CH 60V 31A 10WHITFN
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
ISG0614N06NM5HSCATMA1 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 5
- Package/Case:
- 10-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 31A (Ta), 233A (Tc)
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.3V @ 86µA
- Gate Charge (Qg) (Max) @ Vgs:
- 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6400pF @ 30V
- Power - Max:
- 3W (Ta), 167W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-WHITFN-10-1
- Datasheet:
-
ISG0614N06NM5HSCATMA1.pdf
| Image |  |
| Part Number | ISG0614N06NM5HSCATMA1 |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| Package/Case | 10-PowerWDFN |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 233A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 86µA |
| Gate Charge (Qg) (Max) @ Vgs | 102nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400pF @ 30V |
| Power - Max | 3W (Ta), 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-WHITFN-10-1 |
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