Infineon Technologies IRFH4255DTRPBF

Part No.:
IRFH4255DTRPBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
IC-MAX.COMIRFH4255DTRPBF.pdf
Description:
MOSFET 2N-CH 25V 64A/105A PQFN
Quantity:

Unit Price:$0

Ext Price:$0

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IRFH4255DTRPBF Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
64A, 105A
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1314pF @ 13V
Power - Max:
31W, 38W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PQFN (5x6)
Datasheet:
IC-MAX.COMIRFH4255DTRPBF.pdf
Image IRFH4255DTRPBF
Part Number IRFH4255DTRPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-PowerVDFN
Packaging Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 64A, 105A
Rds On (Max) @ Id, Vgs 3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 13V
Power - Max 31W, 38W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PQFN (5x6)
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