Infineon Technologies IRF7341GTRPBF

Part No.:
IRF7341GTRPBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMIRF7341GTRPBF.pdf
Description:
MOSFET 2N-CH 55V 5.1A 8SO
Quantity:

Unit Price:$0

Ext Price:$0

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IRF7341GTRPBF Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
5.1A
Rds On (Max) @ Id, Vgs:
50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
780pF @ 25V
Power - Max:
2.4W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Datasheet:
IC-MAX.COMIRF7341GTRPBF.pdf
Image IRF7341GTRPBF
Part Number IRF7341GTRPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 5.1A
Rds On (Max) @ Id, Vgs 50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Power - Max 2.4W
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SO
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