Infineon Technologies F3L6MR20W2M1HB70BPSA1
- Part No.:
- F3L6MR20W2M1HB70BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
F3L6MR20W2M1HB70BPSA1.pdf
- Description:
- F3L6MR20W2M1HB70BPSA1
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
F3L6MR20W2M1HB70BPSA1 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EasyPACK™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 4 N-Channel
- FET Feature:
- Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss):
- 2000V (2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 155A (Tj)
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 100A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 112mA
- Gate Charge (Qg) (Max) @ Vgs:
- 297nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 24100pF @ 1.2kV
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
- Datasheet:
-
F3L6MR20W2M1HB70BPSA1.pdf
| Image |  |
| Part Number | F3L6MR20W2M1HB70BPSA1 |
| Manufacturer | Infineon Technologies |
| Series | EasyPACK™ |
| Package/Case | Module |
| Packaging | Tray |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 2000V (2kV) |
| Current - Continuous Drain (Id) @ 25°C | 155A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 112mA |
| Gate Charge (Qg) (Max) @ Vgs | 297nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 24100pF @ 1.2kV |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | - |
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