Infineon Technologies BSZ15DC02KDHXTMA1

Part No.:
BSZ15DC02KDHXTMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMBSZ15DC02KDHXTMA1.pdf
Description:
MOSFET N/P-CH 20V 5.1A 8TSDSON
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BSZ15DC02KDHXTMA1 Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
5.1A, 3.2A
Rds On (Max) @ Id, Vgs:
55mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:
1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:
2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
419pF @ 10V
Power - Max:
2.5W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TSDSON-8-FL
Datasheet:
IC-MAX.COMBSZ15DC02KDHXTMA1.pdf
Image BSZ15DC02KDHXTMA1
Part Number BSZ15DC02KDHXTMA1
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.1A, 3.2A
Rds On (Max) @ Id, Vgs 55mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
Power - Max 2.5W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
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