Infineon Technologies AUIRF7309Q

Part No.:
AUIRF7309Q
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMAUIRF7309Q.pdf
Description:
MOSFET N/P-CH 30V 4A/3A 8SOIC
Quantity:

Unit Price:$0

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AUIRF7309Q Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
4A, 3A
Rds On (Max) @ Id, Vgs:
50mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
520pF @ 15V
Power - Max:
1.4W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Datasheet:
IC-MAX.COMAUIRF7309Q.pdf
Image AUIRF7309QTR AUIRF7309Q
Part Number AUIRF7309QTR AUIRF7309Q
Manufacturer Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tube
Product Status Obsolete Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 4A, 3A 4A, 3A
Rds On (Max) @ Id, Vgs 50mOhm @ 2.4A, 10V 50mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 15V 520pF @ 15V
Power - Max 1.4W 1.4W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
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