EPC EPC2102
- Part No.:
- EPC2102
- Manufacturer:
- EPC
- Category:
- FET, MOSFET Arrays
- Package:
- Die
- Datasheet:
-
EPC2102.pdf
- Description:
- MOSFET 2N-CH 60V 23A DIE
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
EPC2102 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- EPC
- Series:
- eGaN®
- Package/Case:
- Die
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- GaNFET (Gallium Nitride)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 23A
- Rds On (Max) @ Id, Vgs:
- 4.4mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 830pF @ 30V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Datasheet:
-
EPC2102.pdf
| Image |  |
|
| Part Number | EPC2102 | EPC2102ENGRT |
| Manufacturer | EPC | EPC |
| Series | eGaN® | eGaN® |
| Package/Case | Die | Die |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Product Status | Active | Discontinued at Digi-Key |
| Technology | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) |
| FET Feature | - | - |
| Drain to Source Voltage (Vdss) | 60V | 60V |
| Current - Continuous Drain (Id) @ 25°C | 23A | 23A (Tj) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 5V | 4.4mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V | 6.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V | 830pF @ 30V |
| Power - Max | - | - |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | Die | Die |
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