Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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PUUP4DHDIODE GEN PURP 200V 4A TO277A Taiwan Semiconductor Corporation |
10,610 |
|
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- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 200 V | 4A | 930 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 200 V | 71pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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UGF1008GDIODE GEN PURP 600V 10A ITO220AB Taiwan Semiconductor Corporation |
1,000 |
|
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- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 600 V | - | - | - | Through Hole | ITO-220AB | -55°C ~ 150°C |
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SFAF1008GDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
1,776 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 140pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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TST30L150CWDIODE SCHOTTKY 150V 15A TO220AB Taiwan Semiconductor Corporation |
2,439 |
|
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- | TO-220-3 | Tube | Not For New Designs | Schottky | 150 V | 15A | 920 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |
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TPAU3J S1GDIODE AVALANCHE 600V 3A TO277A Taiwan Semiconductor Corporation |
8,842 |
|
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- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 600 V | 3A | 1.88 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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TST30H200CWDIODE SCHOTTKY 200V 15A TO220AB Taiwan Semiconductor Corporation |
1,723 |
|
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- | TO-220-3 | Tube | Not For New Designs | Schottky | 200 V | 15A | 920 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 200 V | - | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |
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TSP15U50S S1GDIODE SCHOTTKY 50V 15A TO277A Taiwan Semiconductor Corporation |
3,368 |
|
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- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 50 V | 15A | 560 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 50 V | - | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 150°C |
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UGS20JHDIODE GEN PURP 600V 20A TO263AB Taiwan Semiconductor Corporation |
130 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 20A | 2 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 600 V | 94.5pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
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TPMR10J S1GDIODE GEN PURP 600V 10A TO277A Taiwan Semiconductor Corporation |
2,672 |
|
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- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 600 V | 10A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 10 µA @ 600 V | 140pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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UGS30JHDIODE GEN PURP 600V 30A TO263AB Taiwan Semiconductor Corporation |
808 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 600 V | 128pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |