Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPUH6J S1GDIODE GEN PURP 600V 6A TO277A Taiwan Semiconductor Corporation |
17,825 |
|
- |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 600 V | 6A | 3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 10 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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FRAF10JGHDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
1,000 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 10 µA @ 600 V | 59pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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FRAF8JGHDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
994 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 600 V | 54pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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FRAF10JGDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
985 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 10 µA @ 600 V | 59pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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FRAF8JGDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
930 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 600 V | 54pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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PUUP8DHDIODE GEN PURP 200V 8A TO277A Taiwan Semiconductor Corporation |
17,105 |
|
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- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 200 V | 8A | 1.05 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 200 V | 96pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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PUUP8BHDIODE GEN PURP 100V 8A TO277A Taiwan Semiconductor Corporation |
11,783 |
|
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- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 100 V | 8A | 1.05 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | 96pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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HERF1007GAHDIODE GEN PURP 800V 10A ITO220AB Taiwan Semiconductor Corporation |
996 |
|
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- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | Standard | 800 V | 10A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 800 V | 40pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AB | -55°C ~ 150°C |
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TPAR3D S1GDIODE AVALANCHE 200V 3A TO277A Taiwan Semiconductor Corporation |
8,967 |
|
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- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Avalanche | 200 V | 3A | 1.55 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 10 µA @ 200 V | 58pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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HERAF808GDIODE GEN PURP 1KV 8A ITO220AC Taiwan Semiconductor Corporation |
1,000 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 1000 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |