Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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SR306 A0GDIODE SCHOTTKY 60V 3A DO201AD Taiwan Semiconductor Corporation |
2,969 |
|
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- | DO-201AD, Axial | Cut Tape (CT) | Active | Schottky | 60 V | 3A | 700 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
RS1GLWHRVGDIODE GEN PURP 400V 1A SOD123W Taiwan Semiconductor Corporation |
8,616 |
|
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- | SOD-123W | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | - | - | - | Surface Mount | SOD-123W | -55°C ~ 175°C |
|
SS115LWHRVGDIODE SCHOTTKY 150V 1A SOD123W Taiwan Semiconductor Corporation |
2,923 |
|
- |
- | SOD-123W | Tape & Reel (TR) | Active | Schottky | 150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 150 V | - | - | - | Surface Mount | SOD-123W | -55°C ~ 150°C |
|
SS310LDIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation |
22,812 |
|
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- | DO-219AB | Tape & Reel (TR) | Not For New Designs | Schottky | 100 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
SS315LW RVGDIODE SCHOTTKY 150V 3A SOD123W Taiwan Semiconductor Corporation |
6,604 |
|
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- | SOD-123W | Tape & Reel (TR) | Active | Schottky | 150 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 150 V | - | - | - | Surface Mount | SOD-123W | -55°C ~ 150°C |
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PU4DBHDIODE GEN PURP 200V 4A DO214AA Taiwan Semiconductor Corporation |
2,249 |
|
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- | DO-214AA, SMB | Tape & Reel (TR) | Active | Standard | 200 V | 4A | 930 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 200 V | 78pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-214AA (SMB) | -55°C ~ 175°C |
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PU4DCHDIODE GEN PURP 200V 4A DO214AB Taiwan Semiconductor Corporation |
5,242 |
|
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- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 200 V | 4A | 930 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 200 V | 78pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AB (SMC) | -55°C ~ 175°C |
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TSP10H60S S1GDIODE SCHOTTKY 60V 10A TO277A Taiwan Semiconductor Corporation |
14,279 |
|
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- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 60 V | 10A | 640 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 60 V | - | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 150°C |
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PU6DCHDIODE GEN PURP 200V 6A DO214AB Taiwan Semiconductor Corporation |
5,260 |
|
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- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 200 V | 6A | 940 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 200 V | 110pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-214AB (SMC) | -55°C ~ 175°C |
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TPUH6D S1GDIODE GEN PURP 200V 6A TO277A Taiwan Semiconductor Corporation |
2,378 |
|
- |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 200 V | 6A | 1.05 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 10 µA @ 200 V | 50pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |