FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AC3M0032120DSIC MOSFET N-CH 1200V 64A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | - | +19V, -8V | - | - | 283W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0065090DSIC MOSFET N-CH 900V 37A TO247-3 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 37A | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | - | +19V, -8V | - | - | 125W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0065100KSIC MOSFET N-CH 1000V 33A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 33A | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | - | +19V, -8V | - | - | 113.5W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-4 |
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AC3M0032120KSIC MOSFET N-CH 1200V 64A TO247- APSEMI |
10,000 | - |
|
Datasheet
|
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | - | +19V, -8V | - | - | 283W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0025065KSIC MOSFET N-CH 650V 74A TO247-4 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 74A | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0030090KSIC MOSFET N-CH 900V 74A TO247-4 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 74A | 15V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | - | +19V, -8V | - | - | 240W | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC2M0025120DSIC MOSFET N-CH 1200V 92A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 92A | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | - | +25V, -10V | - | - | 378W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0025065DSIC MOSFET N-CH 650V 98A TO247-3 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 98A | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0021120KSIC MOSFET N-CH 1200V 102A TO247 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 102A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | - | +19V, -8V | - | - | 469W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0021120DSIC MOSFET N-CH 1200V 117A TO247 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 82A | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | - | +19V, -8V | - | - | 469W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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