FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AC2M1000170DSIC MOSFET N-CH 1700V 6A TO247-3 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 6A | 20V | 1.4Ohm @ 2A, 20V | 4V @ 0.5mA | - | +25V, -10V | - | - | 69W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0280090DSIC MOSFET N-CH 900V 11A TO247-3 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11A | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | - | +19V, -8V | - | - | 45W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0120100KSIC MOSFET N-CH 1000V 24A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 24A | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | - | +19V, -8V | - | - | 83W | -55°C ~ 150°C | - | - | Through Hole | TO-247-4 |
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AC2M0160120DSIC MOSFET N-CH 1200V 18A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 18A | 20V | 196mOhm @ 10A, 20V | 4V @ 2.5mA | - | +25V, -10V | - | - | 125W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC2M0280120DSIC MOSFET N-CH 1200V 11A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A | 20V | 370mOhm @ 6A, 20V | 4V @ 1.25mA | - | +25V, -10V | - | - | 69.4W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0160120DSIC MOSFET N-CH 1200V 18A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 18A | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | - | +19V, -8V | - | - | 97W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0350120DSIC MOSFET N-CH 1200V 8A TO247-3 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 8A | 15V | 455mOhm @ 3.6A, 15V | 3.6V @ 1mA | - | +19V, -8V | - | - | 50W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0120065KSIC MOSFET N-CH 650V 23A TO247-4 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 23A | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | - | +19V, -8V | - | - | 98W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0075120KSIC MOSFET N-CH 1200V 33A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A | 15V | 90mOhm @ 20A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 136W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC2M0080120DSIC MOSFET N-CH 1200V 37A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | - | +25V, -10V | - | - | 129W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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