FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AC3M0120065DSIC MOSFET N-CH 650V 23A TO247-3 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 23A | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | - | +19V, -8V | - | - | 98W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0120090DSIC MOSFET N-CH 900V 24A TO247-3 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 24A | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | - | +19V, -8V | - | - | 97W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0075120DSIC MOSFET N-CH 1200V 33A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A | 15V | 90mOhm @ 20A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 136W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0060065KSIC MOSFET N-CH 650V 38A TO247-4 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 150W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0060065DSIC MOSFET N-CH 650V 30A TO247-3 APSEMI |
10,000 | - |
|
Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 150W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0045065DSIC MOSFET N-CH 650V 50A TO247-3 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | - | +19V, -8V | - | - | 176W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0045065KSIC MOSFET N-CH 650V 50A TO247-4 APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | - | +19V, -8V | - | - | 176W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0040120KSIC MOSFET N-CH 1200V 67A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 67A | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC2M0040120DSIC MOSFET N-CH 1200V 57A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | - | +25V, -10V | - | - | 278W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0040120DSIC MOSFET N-CH 1200V 67A TO247- APSEMI |
10,000 | - |
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Datasheet
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 67A | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.5mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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