制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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G1003AN100V,RD(MAX)<210M@10V,RD(MAX)<2 Goford Semiconductor |
2,615 | - |
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TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A (Tc) | 4.5V, 10V | 120mOhm @ 3A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 532 pF @ 25 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G20N03D2N30V,RD(MAX)<24M@10V,RD(MAX)<29M Goford Semiconductor |
2,413 | - |
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TrenchFET® | 6-WDFN Exposed Pad | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 15mOhm @ 5A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 860 pF @ 30 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
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G1K1P06HHP-60V,-4.5A,RD(MAX)<110M@-10V,VT Goford Semiconductor |
2,135 | - |
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TrenchFET® | TO-261-4, TO-261AA | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 4.5A (Tc) | 10V | 110mOhm @ 4A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 981 pF @ 30 V | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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G050N06LLN60V, 5A,RD<45M@10V,VTH1.0V~2.5V Goford Semiconductor |
11,800 | - |
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TrenchFET® | SOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Tc) | 4.5V, 10V | 45mOhm @ 5A, 10V | 2.5V @ 250µA | 26.4 nC @ 10 V | ±20V | 1343 pF @ 30 V | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6L |
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G170P02D2P-20V,-16A,RD(MAX)<[email protected],VTH Goford Semiconductor |
2,970 | - |
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TrenchFET® | 6-UDFN Exposed Pad | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Tc) | 2.5V, 4.5V | 17mOhm @ 6A, 4.5V | 1V @ 250µA | 30 nC @ 10 V | ±8V | 2179 pF @ 10 V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
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G2002AN200V, 2A,RD<540M@10V,VTH1.0V~3. Goford Semiconductor |
1,225 | - |
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TrenchFET® | SOT-23-6 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2A (Tc) | 4.5V, 10V | 540mOhm @ 1A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±20V | 733 pF @ 100 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6L |
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G1006LEN100V,RD(MAX)<150M@10V,RD(MAX)<1 Goford Semiconductor |
7,247 | - |
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TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A (Tc) | 4.5V, 10V | 150mOhm @ 3A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 532 pF @ 50 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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9926N20V,RD(MAX)<[email protected],RD(MAX)<30 Goford Semiconductor |
3,913 | - |
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- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A | - | 25mOhm @ 4.5A, 4.5V | 1.2V @ 250µA | 10 nC @ 4.5 V | ±10V | 640 pF @ 10 V | - | 1.25W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G2N65KMOSFET N-CH 650V 2A 35W TO-252 Goford Semiconductor |
2,455 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 3.2V @ 250µA | 8 nC @ 10 V | ±20V | 250 pF @ 400 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G09P02LP20V,RD(MAX)<[email protected],RD(MAX)<3 Goford Semiconductor |
5,285 | - |
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TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 2.5V, 4.5V | 20mOhm @ 1A, 4.5V | 1.2V @ 250µA | 72 nC @ 4.5 V | ±12V | 2196 pF @ 10 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |