制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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G08N06SN60V, RD(MAX)<30M@10V,RD(MAX)<40 Goford Semiconductor |
7,654 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Tc) | 4.5V, 10V | 30mOhm @ 3A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 1360 pF @ 30 V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G120N03D3MOSFET N-CH 30V 28A DFN3*3-8L Goford Semiconductor |
5,000 | - |
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- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 10mOhm @ 10A, 10V | 2.5V @ 250µA | 18 nC @ 10 V | ±20V | 1077 pF @ 15 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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GT10N10N100V, 7A,RD<140M@10V,VTH1.5V~2. Goford Semiconductor |
4,267 | - |
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SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Tc) | 4.5V, 10V | 80mOhm @ 3.5A, 10V | 2.5V @ 250µA | 5 nC @ 10 V | ±20V | 205 pF @ 50 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G160N04KN40V, 25A,RD<15M@10V,VTH1.0V~2.0 Goford Semiconductor |
4,779 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 25A (Tc) | 4.5V, 10V | 15mOhm @ 8A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1010 pF @ 20 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G700P06D5P-60V,-25A,RD(MAX)<70M@-10V,VTH- Goford Semiconductor |
4,149 | - |
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TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1451 pF @ 30 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G10P03P30V,RD(MAX)<[email protected],RD(MAX)<3 Goford Semiconductor |
4,127 | - |
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TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Tc) | 2.5V, 4.5V | 28mOhm @ 10A, 4.5V | 1.5V @ 250µA | 44 nC @ 4.5 V | ±12V | 2067 pF @ 15 V | - | 21.9W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G16N03SN30V, 16A,RD<10M@10V,VTH1.0V~2.5 Goford Semiconductor |
3,624 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 5V, 10V | 10mOhm @ 10A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 1321 pF @ 15 V | - | 3.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G160P03KIP-30V,-30A,RD(MAX)<16M@-10V,VTH- Goford Semiconductor |
3,411 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 2.5V @ 250µA | 31.2 nC @ 10 V | ±20V | 1811 pF @ 15 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G50N03JN30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
3,296 | - |
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TrenchFET® | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | ±20V | 1255 pF @ 15 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-251 |
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G12P06KP-60V,-12A,RD(MAX)<75M@-10V,VTH- Goford Semiconductor |
2,500 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 70mOhm @ 6A, 10V | 3V @ 250µA | 23 nC @ 10 V | ±20V | 1322 pF @ 30 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |