制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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G02P06P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Goford Semiconductor |
2,412 | - |
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TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A (Tc) | 4.5V, 10V | 190mOhm @ 1A, 10V | 2.5V @ 250µA | 11.3 nC @ 10 V | ±20V | 566 pF @ 30 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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GT1003AN100V, 3A,RD<140M@10V,VTH1.0V~3. Goford Semiconductor |
1,947 | - |
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SGT | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A (Tc) | 10V | 80mOhm @ 3A, 10V | 2.5V @ 250µA | 5 nC @ 10 V | ±20V | 209 pF @ 50 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G300N04D3MOSFET N-CH 40V 6A DFN3*3-8L Goford Semiconductor |
4,990 | - |
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TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 6A (Tc) | 4.5V, 10V | 30mOhm @ 3A, 10V | 2.5V @ 250µA | 10 nC @ 10 V | ±20V | 479 pF @ 20 V | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G800N06HN60V, 3A,RD<80M@10V,VTH0.7V~1.2V Goford Semiconductor |
2,325 | - |
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TrenchFET® | TO-261-4, TO-261AA | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Tc) | 4.5V, 10V | 80mOhm @ 3A, 10V | 1.2V @ 250µA | 6 nC @ 4.5 V | ±20V | 457 pF @ 30 V | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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5P40P40V,RD(MAX)<85M@-10V,RD(MAX)<12 Goford Semiconductor |
9,210 | - |
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TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 5A (Tc) | 4.5V, 10V | 85mOhm @ 5A, 10V | 3V @ 250µA | 14 nC @ 10 V | ±20V | 600 pF @ 20 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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GT013N04D5N40V,195A,RD<1.7M@10V,VTH2.0V~4. Goford Semiconductor |
5,000 | - |
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- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.7mOhm @ 30A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3927 pF @ 20 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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3400LN30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor |
3,785 | - |
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TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Tc) | 4.5V, 10V | 27mOhm @ 2.8A, 10V | 1.4V @ 250µA | 9.5 nC @ 4.5 V | ±12V | 820 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G66P-16V,-5.8A,RD(MAX)<[email protected],VT Goford Semiconductor |
3,000 | - |
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TrenchFET® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 16 V | 5.8A (Tc) | 2.5V, 4.5V | 45mOhm @ 4.1A, 4.5V | 1V @ 250µA | 7.8 nC @ 4.5 V | ±12V | 740 pF @ 4 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
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G3401LP30V,RD(MAX)<60M@-10V,RD(MAX)<70 Goford Semiconductor |
2,103 | - |
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TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.4A (Tc) | 2.5V, 4.5V, 10V | 55mOhm @ 4A, 10V | 1.3V @ 250µA | 9.3 nC @ 4.5 V | ±12V | 652 pF @ 15 V | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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03N06LN60V,RD(MAX)<100M@10V,RD(MAX)<12 Goford Semiconductor |
6,330 | - |
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TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Tc) | 4.5V, 10V | 80mOhm @ 2A, 10V | 1.2V @ 250µA | 14.6 nC @ 10 V | ±20V | 458 pF @ 30 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |