YAGEO XSEMI XP83T03GJB

Part No.:
XP83T03GJB
Manufacturer:
YAGEO XSEMI
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
IC-MAX.COMXP83T03GJB.pdf
Description:
MOSFET N-CH 30V 75A TO251S
Quantity:

Unit Price:$0

Ext Price:$0

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XP83T03GJB Information

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Manufacturer:
YAGEO XSEMI
Series:
XP83T03
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1840 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
60W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251S
Datasheet:
IC-MAX.COMXP83T03GJB.pdf
Image XP83T03GJB
Part Number XP83T03GJB
Manufacturer YAGEO XSEMI
Series XP83T03
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1840 pF @ 25 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-251S
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