Vishay Siliconix SQV120N06-4M7L_GE3

Part No.:
SQV120N06-4M7L_GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
IC-MAX.COMSQV120N06-4M7L_GE3.pdf
Description:
MOSFET N-CH 60V 120A TO262-3
Quantity:

Unit Price:$0

Ext Price:$0

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SQV120N06-4M7L_GE3 Information

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Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
230 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
TO-262-3
Datasheet:
IC-MAX.COMSQV120N06-4M7L_GE3.pdf
Image SQV120N06-4M7L_GE3
Part Number SQV120N06-4M7L_GE3
Manufacturer Vishay Siliconix
Series TrenchFET®
Package/Case TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-262-3
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