Vishay Siliconix IRFPS29N60LPBF

Part No.:
IRFPS29N60LPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-274AA
Datasheet:
IC-MAX.COMIRFPS29N60LPBF.pdf
Description:
MOSFET N-CH 600V 29A SUPER247
Quantity:

Unit Price:$0

Ext Price:$0

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IRFPS29N60LPBF Information

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Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-274AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
210mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
220 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
6160 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
480W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
SUPER-247™ (TO-274AA)
Datasheet:
IC-MAX.COMIRFPS29N60LPBF.pdf
Image IRFPS29N60LPBF
Part Number IRFPS29N60LPBF
Manufacturer Vishay Siliconix
Series -
Package/Case TO-274AA
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6160 pF @ 25 V
FET Feature -
Power Dissipation (Max) 480W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package SUPER-247™ (TO-274AA)
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Step1:Prepare product
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Step2:Vacuum packaging
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Step4:Individual package
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