Vishay Siliconix IRFI9530G

Part No.:
IRFI9530G
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
IC-MAX.COMIRFI9530G.pdf
Description:
MOSFET P-CH 100V 7.7A TO220-3
Quantity:

Unit Price:$0

Ext Price:$0

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IRFI9530G Information

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Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
860 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
42W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Datasheet:
IC-MAX.COMIRFI9530G.pdf
Image IRFI9530G
Part Number IRFI9530G
Manufacturer Vishay Siliconix
Series -
Package/Case TO-220-3 Full Pack, Isolated Tab
Packaging Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220-3
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Step1:Prepare product
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Step2:Vacuum packaging
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