Vishay Siliconix IRFB18N50K

Part No.:
IRFB18N50K
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMIRFB18N50K.pdf
Description:
MOSFET N-CH 500V 17A TO220AB
Quantity:

Unit Price:$0

Ext Price:$0

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IRFB18N50K Information

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Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2830 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
220W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Datasheet:
IC-MAX.COMIRFB18N50K.pdf
Image IRFB18N50KPBF IRFB18N50K
Part Number IRFB18N50KPBF IRFB18N50K
Manufacturer Vishay Siliconix Vishay Siliconix
Series - -
Package/Case TO-220-3 TO-220-3
Packaging Tube Tube
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2830 pF @ 25 V 2830 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 220W (Tc) 220W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
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