Vishay General Semiconductor - Diodes Division VS-FA40SA50LC

Part No.:
VS-FA40SA50LC
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
FETs, MOSFETs
Package:
SOT-227-4, miniBLOC
Datasheet:
IC-MAX.COMVS-FA40SA50LC.pdf
Description:
MOSFET N-CH 500V 40A SOT-227
Quantity:

Unit Price:$0

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VS-FA40SA50LC Information

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Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
SOT-227-4, miniBLOC
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
130mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
420 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
543W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
SOT-227
Datasheet:
IC-MAX.COMVS-FA40SA50LC.pdf
Image VS-FC420SA15 VS-FA38SA50LCP VS-FA40SA50LC VS-FB180SA10P VS-FB190SA10
Part Number VS-FC420SA15 VS-FA38SA50LCP VS-FA40SA50LC VS-FB180SA10P VS-FB190SA10
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Series - - - - -
Package/Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Packaging Tube Bulk Bulk Bulk Tube
Product Status Active Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 500 V 500 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 400A (Tc) 38A (Tc) 40A (Tc) 180A (Tc) 190A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.75mOhm @ 200A, 10V 130mOhm @ 23A, 10V 130mOhm @ 23A, 10V 6.5mOhm @ 180A, 10V 6.5mOhm @ 180A, 10V
Vgs(th) (Max) @ Id 5.4V @ 1mA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 420 nC @ 10 V 420 nC @ 10 V 380 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13700 pF @ 25 V 6900 pF @ 25 V 6900 pF @ 25 V 10700 pF @ 25 V 10700 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 909W (Tc) 500W (Tc) 543W (Tc) 480W (Tc) 568W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227 SOT-227 SOT-227 SOT-227 SOT-227
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