Vishay General Semiconductor - Diodes Division FB180SA10

Part No.:
FB180SA10
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
FETs, MOSFETs
Package:
SOT-227-4, miniBLOC
Description:
MOSFET N-CH 100V 180A SOT-227
Quantity:

Unit Price:$0

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FB180SA10 Information

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Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
HEXFET®
Package/Case:
SOT-227-4, miniBLOC
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 108A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
380 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
480W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
SOT-227
Image FB180SA10
Part Number FB180SA10
Manufacturer Vishay General Semiconductor - Diodes Division
Series HEXFET®
Package/Case SOT-227-4, miniBLOC
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 108A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 480W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package SOT-227
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