Transphorm TPH3208LDG
- Part No.:
- TPH3208LDG
- Manufacturer:
- Transphorm
- Category:
- FETs, MOSFETs
- Package:
- 3-PowerDFN
- Datasheet:
-
TPH3208LDG.pdf
- Description:
- GANFET N-CH 650V 20A 3PQFN
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
TPH3208LDG Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Transphorm
- Series:
- -
- Package/Case:
- 3-PowerDFN
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 13A, 8V
- Vgs(th) (Max) @ Id:
- 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 8 V
- Vgs (Max):
- ±18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 760 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PQFN (8x8)
- Datasheet:
-
TPH3208LDG.pdf
| Image |  |
| Part Number | TPH3208LDG |
| Manufacturer | Transphorm |
| Series | - |
| Package/Case | 3-PowerDFN |
| Packaging | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V |
| Vgs (Max) | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PQFN (8x8) |
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