Transphorm TP65H070LDG-TR

Part No.:
TP65H070LDG-TR
Manufacturer:
Transphorm
Category:
FETs, MOSFETs
Package:
3-PowerDFN
Datasheet:
IC-MAX.COMTP65H070LDG-TR.pdf
Description:
650 V 25 A GAN FET
Quantity:

Unit Price:$0

Ext Price:$0

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TP65H070LDG-TR Information

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Attribute value
Manufacturer:
Transphorm
Series:
TP65H070L
Package/Case:
3-PowerDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:
9.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
96W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
3-PQFN (8x8)
Datasheet:
IC-MAX.COMTP65H070LDG-TR.pdf
Image TP65H070LDG-TR TP65H070LDG
Part Number TP65H070LDG-TR TP65H070LDG
Manufacturer Transphorm Transphorm
Series TP65H070L TP65H070L
Package/Case 3-PowerDFN 3-PowerDFN
Packaging Tape & Reel (TR) Tube
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology GaNFET (Gallium Nitride) GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V 85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V 9.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V 600 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 96W (Tc) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-PQFN (8x8) 3-PQFN (8x8)
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