Toshiba Semiconductor and Storage XPN7R104NC,L1XHQ

Part No.:
XPN7R104NC,L1XHQ
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
IC-MAX.COMXPN7R104NC,L1XHQ.pdf
Description:
MOSFET N-CH 40V 20A 8TSON
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XPN7R104NC,L1XHQ Information

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Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
U-MOSIII
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1290 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
840mW (Ta), 65W (Tc)
Operating Temperature:
175°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSON Advance-WF (3.1x3.1)
Datasheet:
IC-MAX.COMXPN7R104NC,L1XHQ.pdf
Image XPN7R104NC,L1XHQ
Part Number XPN7R104NC,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIII
Package/Case 8-PowerVDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 10 V
FET Feature -
Power Dissipation (Max) 840mW (Ta), 65W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
  • XPN7R104NC,L1XHQ
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