Toshiba Semiconductor and Storage XPJR6604PB,LXHQ

Part No.:
XPJR6604PB,LXHQ
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
5-PowerSFN
Datasheet:
IC-MAX.COMXPJR6604PB,LXHQ.pdf
Description:
40V; UMOS9; 0.66MOHM; S-TOGL
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XPJR6604PB,LXHQ Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
U-MOSIX-H
Package/Case:
5-PowerSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
0.66mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
128 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11380 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
175°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
S-TOGL™
Datasheet:
IC-MAX.COMXPJR6604PB,LXHQ.pdf
Image XPJR6604PB,LXHQ
Part Number XPJR6604PB,LXHQ
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Package/Case 5-PowerSFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 0.66mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11380 pF @ 10 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package S-TOGL™
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