Toshiba Semiconductor and Storage TW083N65C,S1F
- Part No.:
- TW083N65C,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
TW083N65C,S1F.pdf
- Description:
- G3 650V SIC-MOSFET TO-247 83MOH
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
TW083N65C,S1F Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 113mOhm @ 15A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 18 V
- Vgs (Max):
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 873 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 111W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
- Datasheet:
-
TW083N65C,S1F.pdf
| Image |  |
| Part Number | TW083N65C,S1F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Package/Case | TO-247-3 |
| Packaging | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 113mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 873 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 111W (Tc) |
| Operating Temperature | 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
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