Toshiba Semiconductor and Storage TK160F10N1,LXGQ

Part No.:
TK160F10N1,LXGQ
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC-MAX.COMTK160F10N1,LXGQ.pdf
Description:
MOSFET N-CH 100V 160A TO220SM
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TK160F10N1,LXGQ Information

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Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
U-MOSVIII-H
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
160A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
121 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8510 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
175°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-220SM(W)
Datasheet:
IC-MAX.COMTK160F10N1,LXGQ.pdf
Image TK160F10N1L,LXGQ TK160F10N1,LXGQ TK160F10N1L,LQ
Part Number TK160F10N1L,LXGQ TK160F10N1,LXGQ TK160F10N1L,LQ
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Ta) 160A (Ta) 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V 2.4mOhm @ 80A, 10V 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 4V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V 121 nC @ 10 V 122 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10100 pF @ 10 V 8510 pF @ 10 V 10100 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 375W (Tc)
Operating Temperature 175°C 175°C 175°C
Grade - - -
Qualification - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-220SM(W) TO-220SM(W) TO-220SM(W)
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