Texas Instruments CSD25304W1015T

Part No.:
CSD25304W1015T
Manufacturer:
Texas Instruments
Category:
FETs, MOSFETs
Package:
6-UFBGA, DSBGA
Datasheet:
IC-MAX.COMCSD25304W1015T.pdf
Description:
MOSFET P-CH 20V 3A 6DSBGA
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Unit Price:$0

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CSD25304W1015T Information

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Attribute value
Manufacturer:
Texas Instruments
Series:
NexFET™
Package/Case:
6-UFBGA, DSBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
32.5mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:
1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.4 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
595 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
750mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-DSBGA (1x1.5)
Datasheet:
IC-MAX.COMCSD25304W1015T.pdf
Image CSD25304W1015T
Part Number CSD25304W1015T
Manufacturer Texas Instruments
Series NexFET™
Package/Case 6-UFBGA, DSBGA
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 32.5mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 595 pF @ 10 V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-DSBGA (1x1.5)
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