Taiwan Semiconductor Corporation TSM4NB60CH

Part No.:
TSM4NB60CH
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
TO-251-3 Stub Leads, IPAK
Description:
600V, 4A, SINGLE N-CHANNEL POWER
Quantity:

Unit Price:$0

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TSM4NB60CH Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-251-3 Stub Leads, IPAK
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14.5 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251S (IPAK SL)
Image TSM4NB60CH C5G TSM4NB60CH
Part Number TSM4NB60CH C5G TSM4NB60CH
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - -
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Stub Leads, IPAK
Packaging Tube Tube
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V 2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V 14.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V 500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-251 (IPAK) TO-251S (IPAK SL)
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