Taiwan Semiconductor Corporation MBR2560CT

Part No.:
MBR2560CT
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Diode Arrays
Package:
TO-220-3
Datasheet:
IC-MAX.COMMBR2560CT.pdf
Description:
DIODE ARR SCHOTT 60V 25A TO220AB
Quantity:

Unit Price:$0

Ext Price:$0

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MBR2560CT Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
60 V
Current - Average Rectified (Io) (per Diode):
25A
Voltage - Forward (Vf) (Max) @ If:
750 mV @ 25 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 µA @ 60 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Datasheet:
IC-MAX.COMMBR2560CT.pdf
Image MBR2560CT-Y MBR2560CT MBR2560CTH
Part Number MBR2560CT-Y MBR2560CT MBR2560CTH
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - - -
Package/Case TO-220-3 TO-220-3 TO-220-3
Packaging Tube Tube Tube
Product Status Active Discontinued at Digi-Key Discontinued at Digi-Key
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 60 V
Current - Average Rectified (Io) (per Diode) 25A 25A 25A
Voltage - Forward (Vf) (Max) @ If 750 mV @ 12.5 A 750 mV @ 25 A 750 mV @ 25 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 200 µA @ 60 V 200 µA @ 60 V 200 µA @ 60 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Grade - - Automotive
Qualification - - AEC-Q101
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
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