Taiwan Semiconductor Corporation HERAF804G

Part No.:
HERAF804G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Diodes
Package:
TO-220-2 Full Pack
Datasheet:
IC-MAX.COMHERAF804G.pdf
Description:
DIODE GEN PURP 300V 8A ITO220AC
Quantity:

Unit Price:$0

Ext Price:$0

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HERAF804G Information

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Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-2 Full Pack
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
300 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 300 V
Capacitance @ Vr, F:
80pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Datasheet:
IC-MAX.COMHERAF804G.pdf
Image HERAF804G HERAF804GH HERAF804G C0G
Part Number HERAF804G HERAF804GH HERAF804G C0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - - -
Package/Case TO-220-2 Full Pack TO-220-2 Full Pack TO-220-2 Full Pack
Packaging Tube Tube Tube
Product Status Active Active Discontinued at Digi-Key
Technology Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 300 V 300 V 300 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1 V @ 8 A 1 V @ 8 A 1 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 300 V 10 µA @ 300 V 10 µA @ 300 V
Capacitance @ Vr, F 80pF @ 4V, 1MHz 80pF @ 4V, 1MHz 80pF @ 4V, 1MHz
Grade - Automotive -
Qualification - AEC-Q101 -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package ITO-220AC ITO-220AC ITO-220AC
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
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