Taiwan Semiconductor Corporation ESH1DM RSG
- Part No.:
- ESH1DM RSG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- 2-SMD, Flat Leads
- Description:
- DIODE GEN PURP 200V 1A MICRO SMA
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
ESH1DM RSG Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- 2-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 200 V
- Capacitance @ Vr, F:
- 3pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro SMA
- Operating Temperature - Junction:
- -55°C ~ 150°C
| Image |  |
| Part Number | ESH1DM RSG |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Package/Case | 2-SMD, Flat Leads |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Capacitance @ Vr, F | 3pF @ 4V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
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