Taiwan Semiconductor Corporation ES1DL MQG
- Part No.:
- ES1DL MQG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- DO-219AB
- Datasheet:
-
ES1DL MQG.pdf
- Description:
- DIODE GEN PURP 200V 1A SUB SMA
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
ES1DL MQG Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- DO-219AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 35 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 200 V
- Capacitance @ Vr, F:
- 10pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sub SMA
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Datasheet:
-
ES1DL MQG.pdf
| Image |  |
| Part Number | ES1DL MQG |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Package/Case | DO-219AB |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Capacitance @ Vr, F | 10pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
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